METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER USING HYDRATED COPPER FORMATE AS A NEW PRECURSOR

被引：25

作者：

MOUCHE, MJ ^{[1
]}

MERMET, JL ^{[1
]}

ROMAND, M ^{[1
]}

CHARBONNIER, M ^{[1
]}

机构：

[1] UNIV LYON 1,CHIM APPL LAB,CNRS,ERS 069,F-69222 VILLEURBANNE,FRANCE

来源：

THIN SOLID FILMS | 1995年 / 262卷 / 1-2期

关键词：

CHEMICAL VAPOR DEPOSITION; COPPER; MASS SPECTROSCOPY; WHISKERS;

D O I：

10.1016/0040-6090(95)05813-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper films were obtained by metal-organic chemical vapour deposition using hydrated copper formate. The films were deposited on Si(100) and sputtered TiN/Si(100) 4-in wafers, at substrate temperatures of about 300 degrees C, with a reducing or inert carrier gas. Results from X-ray diffraction and X-ray photoelectron spectroscopy indicated a pure, crystalline and oxygen-free copper. Different film morphologies were observed by scanning electron microscopy: both continuous films and inhomogeneous films with copper crystallites monodirectionally oriented were observed. In situ mass-spectroscopy analysis allows the proposal of some reaction mechanisms and highlights the importance of the initial hydration level of the precursor on the nucleation rate.

引用

页码：1 / 6

页数：6

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