EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON (1102)SAPPHIRE FOR YB2CU3O7-DELTA THIN-FILMS

被引：74

作者：

WU, XD

MUENCHAUSEN, RE

NOGAR, NS

PIQUE, A

EDWARDS, R

WILKENS, B

RAVI, TS

HWANG, DM

CHEN, CY

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,ERDC,DIV CHEM & LASER SCI,LOS ALAMOS,NM 87545

[2] NEOCERA INC,NEW BRUNSWICK,NJ 08901

[3] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1102BAR1) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam (2.8 MeV He++) channeling measurements shows that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa2Cu3O7-delta thin films deposited on YSZ/sapphire have T(c) and J(c) of up to 89 K and 1 x 10(6) A/cm2 at 77 K, respectively.

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页码：304 / 306

页数：3

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