MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE ON (100)GAAS BY COMPOUND SOURCE AND SEPARATE SOURCE EVAPORATION - A COMPARATIVE-STUDY

被引：33
作者：
PARK, RM
MAR, HA
SALANSKY, NM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词：
D O I：
10.1116/1.583212
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：676 / 680
页数：5
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