FACTORS AFFECTING THE TEMPERATURE UNIFORMITY OF SEMICONDUCTOR SUBSTRATES IN MOLECULAR-BEAM EPITAXY

被引：10

作者：

JOHNSON, SR ^{[1
]}

LAVOIE, C ^{[1
]}

NODWELL, E ^{[1
]}

NISSEN, MK ^{[1
]}

TIEDJE, T ^{[1
]}

MACKENZIE, JA ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1Z1,BC,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature of GaAs substrates is profiled in a molecular-beam epitaxy system with a spatial resolution of 3 mm and a thermal resolution of 0.4-degrees-C, respectively. The effects of substrate doping, back surface textures, thermal contact to the holder, and a pyrolytic boron nitride diffuser plate, on the temperature uniformity, are explored for indium-free mounted substrates. Both positive and negative curvature temperature profiles are observed.

引用

页码：1225 / 1228

页数：4

共 11 条

[1] MBE FILM GROWTH BY DIRECT FREE SUBSTRATE HEATING [J].

ERICKSON, LP ;

CARPENTER, GL ;

SEIBEL, DD ;

PALMBERG, PW ;

PEARAH, P ;

KOPP, W ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :536-537

[2] MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE USING DIRECT RADIATIVE SUBSTRATE HEATING [J].

HELLMAN, ES ;

PITNER, PM ;

HARWIT, A ;

LIU, D ;

YOFFE, GW ;

HARRIS, JS ;

CAFFEE, B ;

HIERL, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :574-577

[3]

HELLMAN ES, 1986, J CRYST GROWTH, V81, P38

[4] SEMICONDUCTOR SUBSTRATE-TEMPERATURE MEASUREMENT BY DIFFUSE REFLECTANCE SPECTROSCOPY IN MOLECULAR-BEAM EPITAXY [J].

JOHNSON, SR ;

LAVOIE, C ;

TIEDJE, T ;

MACKENZIE, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :1007-1010

[5] DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH [J].

JORDAN, AS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2218-2227

[6]

KIRILLOV DM, Patent No. 5118200

[7] DIFFUSE OPTICAL REFLECTIVITY MEASUREMENTS ON GAAS DURING MOLECULAR-BEAM EPITAXY PROCESSING [J].

LAVOIE, C ;

JOHNSON, SR ;

MACKENZIE, JA ;

TIEDJE, T ;

VANBUUREN, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :930-933

[8] AN INDIUM-FREE MOUNT FOR GAAS SUBSTRATE HEATING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

MARS, DE ;

MILLER, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :571-573

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATION-HEATED SUBSTRATES [J].

PALMATEER, SC ;

LEE, BR ;

HWANG, JCM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :3028-3029

[10]

WEAVER JH, 1981, PHYSICS DATA OPTICAL

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