INVESTIGATION OF ERBIUM DOPING OF INGAASP LAYERS GROWN BY LIQUID-PHASE EPITAXY

被引：1
|
作者：
WU, MC
CHEN, EH
CHIU, CM
机构：
[1] Research Institute of Electrical Engineering, National Tsing Hua University, Hsinchu
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期
关键词：
D O I：
10.1063/1.352953
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical and optical measurements of InGaAsP layers grown by liquid-phase epitaxy with different amounts of Er metal (0-0.60 wt %) added to growth solutions are reported. The presence of Er during growth causes the decrease of electron concentration and the strong suppression of donor-related optical transitions due to the effective removal of donors. The characteristic Er3+ emission lines located in the 1.503-1.542 mum region can only be detected in the 1.3 mum wavelength Er-doped InGaAsP layers. We attribute it to be the formation of a new type of Er3+ center in the InGaAsP host.
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页码：3482 / 3485
页数：4
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