U-SHAPED DISTRIBUTIONS AT SEMICONDUCTOR INTERFACES AND THE NATURE OF THE RELATED DEFECT CENTERS

被引：17
作者：
FLIETNER, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1985年 / 91卷 / 01期
关键词：
D O I：
10.1002/pssa.2210910120
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：153 / 164
页数：12
相关论文
共 57 条
[31]   STRUCTURAL DAMAGE AT THE SI/SIO2 INTERFACE RESULTING FROM ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES [J].
MIKAWA, RE ;
LENAHAN, PM .
APPLIED PHYSICS LETTERS, 1985, 46 (06) :550-552
[32]   ELECTRONIC CHARACTERIZATION OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES [J].
MONCH, W .
THIN SOLID FILMS, 1983, 104 (3-4) :285-299
[33]   CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS [J].
MONCH, W .
SURFACE SCIENCE, 1983, 132 (1-3) :92-121
[34]  
MONCH W, 1984, FESTKOR-ADV SOLID ST, V24, P229
[35]   A MODEL OF INTERFACE STATES AND CHARGES AT THE SI-SIO2 INTERFACE - ITS PREDICTIONS AND COMPARISONS WITH EXPERIMENTS [J].
NGAI, KL ;
WHITE, CT .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :320-337
[36]  
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[37]   INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J].
POINDEXTER, EH ;
CAPLAN, PJ ;
DEAL, BE ;
RAZOUK, RR .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :879-884
[38]   ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION [J].
POINDEXTER, EH ;
GERARDI, GJ ;
RUECKEL, ME ;
CAPLAN, PJ ;
JOHNSON, NM ;
BIEGELSEN, DK .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2844-2849
[39]  
POINDEXTER EH, 1981, SPRINGER SERIES ELEC, V7, P150
[40]   GENERATION ANNEALING KINETICS OF INTERFACE STATES ON OXIDIZED SILICON ACTIVATED BY 10.2-EV PHOTOHOLE INJECTION [J].
SAH, CT ;
SUN, JYC ;
TZOU, JJT .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8886-8893
123456