U-SHAPED DISTRIBUTIONS AT SEMICONDUCTOR INTERFACES AND THE NATURE OF THE RELATED DEFECT CENTERS

被引：17
作者：
FLIETNER, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1985年 / 91卷 / 01期
关键词：
D O I：
10.1002/pssa.2210910120
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：153 / 164
页数：12
相关论文
共 57 条
[21]   CHARACTER OF SURFACE-STATES AT INSB SURFACES [J].
KREUTZ, EW ;
RICKUS, E ;
SCHROLL, P ;
SOTNIK, N .
SURFACE SCIENCE, 1979, 86 (JUL) :794-802
[22]   CHARACTER OF SURFACE-STATES AT GAAS-SURFACES [J].
KREUTZ, EW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02) :687-696
[23]  
LAMFRIED WH, 1981, PHYSIK HALBLEITER OB, V12, P207
[24]   THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J].
LAUGHLIN, RB ;
JOANNOPOULOS, JD ;
CHADI, DJ .
PHYSICAL REVIEW B, 1980, 21 (12) :5733-5744
[25]   HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J].
LENAHAN, PM ;
DRESSENDORFER, PV .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3495-3499
[26]   PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J].
LENAHAN, PM ;
DRESSENDORFER, PV .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :96-98
[27]   NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J].
LINDAU, I ;
CHYE, PW ;
GARNER, CM ;
PIANETTA, P ;
SU, CY ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1332-1339
[28]   COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J].
MA, TP ;
SCOGGAN, G ;
LEONE, R .
APPLIED PHYSICS LETTERS, 1975, 27 (02) :61-63
[29]  
Many A., 1965, SEMICONDUCTOR SURFAC
[30]   ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP [J].
MEINERS, LG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :373-379
123456