GAAS-ON-SI MODULATOR USING A BURIED SILICIDE REFLECTOR

被引：5
|
作者：
GOOSSEN, KW [1 ]
CUNNINGHAM, JE [1 ]
WHITE, AE [1 ]
SHORT, KT [1 ]
JAN, WY [1 ]
WALKER, JA [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 02期
关键词：
D O I：
10.1109/68.122341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have produced a surface-normal GaAs quantum-well absorption modulator atop a silicon wafer that has been implanted with Co and annealed to form a silicide layer. The silicide layer functions as a mirror allowing reflection mode operation. This substantially reduces the thickness of the modulator compared to devices with AlGaAs-AlAs multilayer reflector stacks. We obtained a contrast ratio of 2.5 with 25 V operation.
引用
收藏
页码：140 / 142
页数：3
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