RECOMBINATION MODEL FOR N-TYPE GERMANIUM IRRADIATED WITH GAMMA QUANTA FROM CO-60

被引:0
作者
TKACHEV, VD [1 ]
URENEV, VI [1 ]
YAVID, VY [1 ]
机构
[1] VI LENIN STATE UNIV,MINSK,BESSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 09期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:998 / 999
页数:2
相关论文
共 12 条
[1]  
GLINCHUK KD, 1972, SEMICONDUCTOR TECHNO, P51
[2]  
KONOPLEVA RF, 1960, SOV PHYS-SOL STATE, V2, P533
[3]  
LATYSHEV AV, 1973, P S PLASMA PHYSICS E, P111
[4]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
[5]   RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS [J].
OKADA, JI .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) :1338-1344
[6]  
RAVICH YI, 1967, PHOTOMAGNETIC EFFECT
[7]  
RYVKIN SM, 1961, SOV PHYS-SOL STATE, V2, P1771
[8]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[9]   RECOMBINATION PARAMETERS IN LOW-RESISTIVITY GAMMA-IRRADIATED TYPE GERMANIUM [J].
SROUR, JR .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (12) :4977-+
[10]   RECOMBINATION AND TRAPPING IN 60CO GAMMA-IRRADIATED N-TYPE GERMANIUM [J].
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3145-+