AL0.25IN0.75P/AL0.48IN0.52AS/GA0.35IN0.65AS GRADED CHANNEL PSEUDOMORPHIC HEMTS WITH HIGH CHANNEL-BREAKDOWN VOLTAGE

被引：27
作者：
CHOUGH, KB
CANEAU, C
HONG, WP
SONG, JI
机构：
[1] Bellcore, Red Bank
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 01期
关键词：
D O I：
10.1109/55.289470
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new Al0.25ln0.75P/Al0.48In0.52As/Ga0.35In0.65As pseudomorphic HEMT where the InAs mole fraction of the Ga1-xInxAs channel was graded (x = 0.53 --> 0.65 --> 0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al0.25In0.75P Schottky layer increased the Schottky barrier height. Devices having 0.5 mum gate-length showed g(m) of 520 mS/mm and I(max) of 700 mA/mm. The gate-drain (BV(g-d)) and source-drain (BV(d-s)) breakdown voltages were as high as -14 and 13 V, respectively. An f(T) of 70 GHz and f(max) of 90 GHz were obtained.
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页码：33 / 35
页数：3
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