SPIN RELAXATION IN GAAS-ALXGA1-XAS HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS

被引：36

作者：

FRENKEL, DM

机构：

[1] Institute for Theoretical Physics, University of California, Santa Barbara

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.43.14228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider spin-polarized GaAs-Al(x)Ga(1-x)As heterostructures in high magnetic fields at zero temperature. We calculate the contribution of the phonon emission to the spin-relaxation time T1 of the electrons in spatially localized states. We emphasize the relationship of this problem to the experiments of Dobers, von Klitzing, and Weimann [Phys. Rev. B 38, 5453 (1988)].

引用

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页码：14228 / 14231

页数：4

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