SPATIALLY-RESOLVED X-RAY ABSORPTION NEAR-EDGE SPECTROSCOPY OF SILICON IN THIN SILICON-OXIDE FILMS

被引：31

作者：

HARP, GR ^{[1
]}

HAN, ZL ^{[1
]}

TONNER, BP ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,1900 E KENWOOD BLVD,MILWAUKEE,WI 53211

来源：

PHYSICA SCRIPTA | 1990年 / T31卷

关键词：

D O I：

10.1088/0031-8949/1990/T31/003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structure of oxide thin films on silicon single crystals has been measured with high spatial resolution by x-ray absorption near edge spectroscopy (XANES) using a photoelectron microscope and monochromatic synchrotron radiation. Native oxide overlayers on Si(100) and Si(111) crystals were studied at various stages during thermal desorption of the oxide. The spatial resolution capability of the microscope is used to perform selected-area XANES measurements of silicon and silicon oxides, which reveal for the first time the absorption characteristics of intermediate oxidation states of silicon (Si2+ and Si3+), and identify the spin-orbit splitting of the silicon 2p core-exciton structure in Si2+, Si3+, and SiO2. Our results confirm photoemission measurements which find Si2+ and Si3+ states existing at vertical interfaces between Si and SiO2. Unlike the photoemission spectra, however, selected-area XANES can resolve the spectroscopic signatures of these intermediate oxidation states in laterally inhomogeneous interfaces. © 1990 IOP Publishing Ltd.

引用

页码：23 / 27

页数：5

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