MIGRATION-ENHANCED EPITAXY ON A (111)B ORIENTED GAAS SUBSTRATE

被引：20

作者：

IMAMOTO, H

SATO, F

IMANAKA, K

SHIMURA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：115 / 116

页数：2

共 7 条

[1] LOW-TEMPERATURE (350-DEGREES-C) GROWTH OF ALGAAS/GAAS LASER DIODE BY MIGRATION ENHANCED EPITAXY [J].

ASAI, M ;

SATO, F ;

IMAMOTO, H ;

IMANAKA, K ;

SHIMURA, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :432-434

[2] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN ON VARIOUSLY ORIENTED GAAS SUBSTRATES BY MBE [J].

FUKUNAGA, T ;

TAKAMORI, T ;

NAKASHIMA, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :85-90

[3] REDUCTION IN THRESHOLD CURRENT-DENSITY OF QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES MISORIENTED (111)B SUBSTRATES [J].

HAYAKAWA, T ;

KONDO, M ;

SUYAMA, T ;

TAKAHASHI, K ;

YAMAMOTO, S ;

HIJIKATA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L302-L305

[4] NEAR-IDEAL LOW THRESHOLD BEHAVIOR IN (111) ORIENTED GAAS/ALGAAS QUANTUM WELL LASERS [J].

HAYAKAWA, T ;

SUYAMA, T ;

TAKAHASHI, K ;

KONDO, M ;

YAMAMOTO, S ;

HIJIKATA, T .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :339-341

[5] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

[6] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02) :169-179

[7]

IMAMOTO H, 1988, INT C ELECTRONIC MAT, P110

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