EELS OF THICK SPECIMENS

被引：20

作者：

EGERTON, RF ^{[1
]}

YANG, YY ^{[1
]}

CHEN, FYY ^{[1
]}

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

来源：

ULTRAMICROSCOPY | 1991年 / 38卷 / 3-4期

关键词：

D O I：

10.1016/0304-3991(91)90169-7

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Measurements on higher-energy ionization edges (above 1000 eV) demonstrate the possibility of elemental analysis of relatively thick specimens by electron energy-loss spectroscopy. The silicon K-edge is found to have a jump ratio as high as 1.5 for specimens 500 nm in thickness.

引用

页码：349 / 352

页数：4

共 9 条

[1]

AHN CC, 1992, APPLICATIONS TRANSMI

[2] CORRECTING ELECTRON-ENERGY LOSS SPECTRA FOR ARTIFACTS INTRODUCED BY A SERIAL DATA-COLLECTION SYSTEM [J].