REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES

被引：57
作者：
KUECH, TF
POTEMSKI, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期
关键词：
D O I：
10.1063/1.95995
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：821 / 823
页数：3
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