EFFECTS OF CF4 PLASMA-ETCHING OF SIO2 ON THE PROPERTIES OF MOS STRUCTURES FORMED ON THE REMAINING SIO2-FILMS

被引：0

作者：

TOKUDA, Y ^{[1
]}

YAMANE, H ^{[1
]}

USAMI, A ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1985年 / 18卷 / 01期

关键词：

CAPACITORS - PLASMA DEVICES - QUARTZ - SEMICONDUCTOR DEVICES; MOS - Semiconductor Insulator Boundaries - SILICA;

D O I：

10.1088/0022-3727/18/1/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the CF//4 plasma etching of thermally grown SiO//2 films over Si on the Si-SiO//2 interface have been studied; MOS capacitors were formed on the remaining SiO//2 films in order to evaluate the properties of the Si-SiO//2 interface after plasma etching. The etching was found to induce large densities of interface states. These interface states could be annealed by post-metallization annealing at 450 degree C in N//2 for 10 min.

引用

页码：L1 / L4

页数：4