CHARACTERIZATION OF N-TYPE BETA-SIC AS A PIEZORESISTOR

被引：120
作者：
SHOR, JS
GOLDSTEIN, D
KURTZ, AD
机构：
[1] Kulite Semiconductor Products. Inc., Leonia
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 06期
关键词：
D O I：
10.1109/16.214734
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiC is currently being investigated for device applications involving high temperatures. In this paper, the properties of n-type beta-SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels. The maximum gauge factor observed was -31.8 for unintentionally doped (10(16)-10(17)/cm3) material. This gauge factor decreases with temperature to approximately half its room-temperature value at 450-degrees-C. Unintentionally doped SiC has a roughly constant TCR of 0.72%/-degrees-C over the range 25-800-degrees-C and exhibits full impurity ionization at room temperature. Degenerately doped gauges (N(d) = 10(20)/cm3) exhibited a lower gauge factor (-12.7), with a more constant temperature behavior and a lower TCR (0.04%/degrees-C). The mechanisms of the piezoresistive effect and TCR in n-SiC are discussed, as well as their application towards sensors.
引用
收藏
页码：1093 / 1099
页数：7
相关论文
共 19 条
  • [1] Air Force Cambridge Research Laboratories (U.S.)
  • [2] University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973
  • [3] FIRST DJ, 1966, Patent No. 3245252
  • [4] FREITAS JA, 1987, APPL PHYS LETT, V52, P1695
  • [5] GUK GN, 1976, SOV PHYS SEMICOND+, V10, P83
  • [6] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
    HERRING, C
    VOGT, E
    [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961
  • [7] CONTROLLED SUBLIMATION GROWTH OF SINGLE CRYSTALLINE 4H-SIC AND 6H-SIC AND IDENTIFICATION OF POLYTYPES BY X-RAY-DIFFRACTION
    KANAYA, M
    TAKAHASHI, J
    FUJIWARA, Y
    MORITANI, A
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (01) : 56 - 58
  • [8] ELECTRON-CYCLOTRON RESONANCE IN CUBIC SIC
    KAPLAN, R
    WAGNER, RJ
    KIM, HJ
    DAVIS, RF
    [J]. SOLID STATE COMMUNICATIONS, 1985, 55 (01) : 67 - 69
  • [9] THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS
    KEYES, RW
    [J]. SOLID STATE PHYSICS, 1960, 11 : 149 - 221
  • [10] HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES
    MATUS, LG
    POWELL, JA
    SALUPO, CS
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1770 - 1772
12