CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH

被引：32
作者：
WILT, DP
LONG, J
DAUTREMONTSMITH, WC
FOCHT, MW
SHEN, TM
HARTMAN, RL
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 16期
关键词：
D O I：
10.1049/el:19860594
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：869 / 870
页数：2
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