DIGITAL CHEMICAL VAPOR-DEPOSITION OF SIO2

被引：11
作者：
NAKANO, M
SAKAUE, H
KAWAMOTO, H
NAGATA, A
HIROSE, M
HORIIKE, Y
机构：
[1] Department of Electrical Engineering, Hiroshima University
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期
关键词：
D O I：
10.1063/1.104284
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH 4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.
引用
收藏
页码：1096 / 1098
页数：3
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