DIGITAL CHEMICAL VAPOR-DEPOSITION OF SIO2

被引：11
|
作者：
NAKANO, M
SAKAUE, H
KAWAMOTO, H
NAGATA, A
HIROSE, M
HORIIKE, Y
机构：
[1] Department of Electrical Engineering, Hiroshima University
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期
关键词：
D O I：
10.1063/1.104284
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH 4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.
引用
收藏
页码：1096 / 1098
页数：3
相关论文
共 50 条
  • [21] THE ELECTRICAL CHARACTERISTICS OF METAL SIO2/INSB CAPACITOR FABRICATED BY PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION
    SUN, TP
    LEE, SC
    YANG, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1115 - 1121
  • [22] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF (ZNO)X(SIO2)1-X FILMS
    LAWRENCE, DJ
    LEE, ST
    BLANTON, TN
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 885 - 890
  • [23] PHOTOINDUCED ACID-CATALYZED SIO2 FORMATION AT THE POLYMER SURFACE BY CHEMICAL VAPOR-DEPOSITION
    SHIRAI, M
    HAYASHI, M
    TSUNOOKA, M
    MACROMOLECULES, 1992, 25 (01) : 195 - 200
  • [24] Chemical vapor deposition of Ge nanocrystals on SiO2
    Baron, T
    Pelissier, B
    Perniola, L
    Mazen, F
    Hartmann, JM
    Rolland, G
    APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1444 - 1446
  • [25] DIFFERENCES IN THE SIO2/INP INTERFACES OBTAINED BY THERMAL AND UV-INDUCED CHEMICAL VAPOR-DEPOSITION
    LICOPPE, C
    DEBAUCHE, C
    HOUZAY, F
    FLICSTEIN, J
    NISSIM, YI
    MOISON, JM
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 789 - 794
  • [26] FORMATION OF DEVICE QUALITY SI SIO2 INTERFACES AT LOW SUBSTRATE TEMPERATURES BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2
    LUCOVSKY, G
    KIM, SS
    FITCH, JT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 822 - 831
  • [27] SELECTIVE DEPOSITION OF DIAMOND FILMS ON SILICON-WAFER WITH SIO2 MASKS BY TUNGSTEN FILAMENT CHEMICAL VAPOR-DEPOSITION
    YU, S
    JIN, ZS
    LU, XY
    ZOU, GT
    MATERIALS LETTERS, 1991, 10 (7-8) : 375 - 378
  • [28] SELECTIVELY ALIGNED POLYMER FILM GROWTH ON OBLIQUELY EVAPORATED SIO2 PATTERN BY CHEMICAL VAPOR-DEPOSITION
    YOSHIMURA, T
    MOTOYOSHI, K
    TATSUURA, S
    SOTOYAMA, W
    MATSUURA, A
    HAYANO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7B): : L980 - L982
  • [29] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 FILM USING DIRECT EXCITATION PROCESS BY DEUTERIUM LAMP
    OKUYAMA, M
    TOYODA, Y
    HAMAKAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L97 - L99
  • [30] HIGH-PERFORMANCE METAL/SIO2/INSB CAPACITOR FABRICATED BY PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION
    SUN, TP
    LEE, SC
    LIU, KC
    PANG, YM
    YANG, SJ
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3701 - 3706
12345