EFFECT OF W-DOPING ON THE GROWTH OF TIC CRYSTAL BY THE FLOATING ZONE METHOD

[1] CRACKING OF CZOCHRALSKI-GROWN CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 427 - 430

[2] Ishizawa Y., 1986, Journal of the Vacuum Society of Japan, V29, P578, DOI 10.3131/jvsj.29.12_578

[3] FIELD-EMISSION PROPERTIES OF (110)-ORIENTED CARBIDE TIPS [J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-6): : 9 - 14

[4] PREPARATION OF TIC SINGLE-CRYSTAL FROM SELF-COMBUSTION ROD BY FLOATING ZONE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (04) : 481 - 484

[5] TEMPERATURE DISTRIBUTION IN CRYSTAL RODS WITH HIGH MELTING-POINTS PREPARED BY A RF FLOATING ZONE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 419 - 425

[6] GROWTH OF SINGLE-CRYSTALS OF THE IVA GROUP TRANSITION-METAL CARBIDES BY A FLOATING ZONE TECHNIQUE [J]. JOURNAL OF THE LESS-COMMON METALS, 1981, 82 (1-2): : 63 - 68

[7] PREPARATION OF TICX SINGLE-CRYSTALS WITH MAXIMUM CARBON CONTENT BY A FLOATING ZONE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 1 - 7

[8] PREPARATION OF ZRCX SINGLE-CRYSTALS WITH CONSTANT COMPOSITIONS BY FLOATING ZONE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 164 - 170

[9] TEMPERATURE DISTRIBUTION IN TIC CRYSTAL ROD PREPARED BY RF FLOATING ZONE TECHNIQUE [J]. JOURNAL OF THE LESS-COMMON METALS, 1985, 113 (02): : 205 - 212

[10] OTANI S, IN PRESS J CRYSTAL G

[1] CRACKING OF CZOCHRALSKI-GROWN CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 427 - 430

[2] Ishizawa Y., 1986, Journal of the Vacuum Society of Japan, V29, P578, DOI 10.3131/jvsj.29.12_578

[3] FIELD-EMISSION PROPERTIES OF (110)-ORIENTED CARBIDE TIPS [J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-6): : 9 - 14

[4] PREPARATION OF TIC SINGLE-CRYSTAL FROM SELF-COMBUSTION ROD BY FLOATING ZONE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (04) : 481 - 484

[5] TEMPERATURE DISTRIBUTION IN CRYSTAL RODS WITH HIGH MELTING-POINTS PREPARED BY A RF FLOATING ZONE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 419 - 425

[6] GROWTH OF SINGLE-CRYSTALS OF THE IVA GROUP TRANSITION-METAL CARBIDES BY A FLOATING ZONE TECHNIQUE [J]. JOURNAL OF THE LESS-COMMON METALS, 1981, 82 (1-2): : 63 - 68

[7] PREPARATION OF TICX SINGLE-CRYSTALS WITH MAXIMUM CARBON CONTENT BY A FLOATING ZONE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 1 - 7

[8] PREPARATION OF ZRCX SINGLE-CRYSTALS WITH CONSTANT COMPOSITIONS BY FLOATING ZONE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 164 - 170

[9] TEMPERATURE DISTRIBUTION IN TIC CRYSTAL ROD PREPARED BY RF FLOATING ZONE TECHNIQUE [J]. JOURNAL OF THE LESS-COMMON METALS, 1985, 113 (02): : 205 - 212

[10] OTANI S, IN PRESS J CRYSTAL G