FREE-CARRIER PLASMA EFFECTS IN ION-IMPLANTED AMORPHOUS LAYERS OF SILICON

被引：13
作者：
SPITZER, WG
WADDELL, CN
NARAYANAN, GH
FREDRICKSON, JE
PRUSSIN, S
机构：
[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007
[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
[3] CALIF STATE UNIV LONG BEACH,DEPT PHYS & ASTRON,LONG BEACH,CA 90840
[4] TRW SEMICOND,LAWNDALE,CA 90260
来源：
APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 12期
关键词：
D O I：
10.1063/1.89284
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：623 / 626
页数：4
相关论文
共 50 条
  • [41] CIRCULAR ETCH PITS IN ION-IMPLANTED AMORPHOUS SILICON FILMS
    TU, KN
    TAN, SI
    CROWDER, BL
    APPLIED PHYSICS LETTERS, 1973, 22 (06) : 274 - 275
  • [42] ENVIRONMENTS OF ION-IMPLANTED AS AND GA IMPURITIES IN AMORPHOUS-SILICON
    GREAVES, GN
    DENT, AJ
    DOBSON, BR
    KALBITZER, S
    PIZZINI, S
    MULLER, G
    PHYSICAL REVIEW B, 1992, 45 (12): : 6517 - 6533
  • [43] Ion-implanted amorphous silicon studied by variable coherence TEM
    Cheng, JY
    Gibson, JM
    Voyles, PM
    Treacy, MMJ
    Jacobson, DC
    ADVANCES IN MATERIALS PROBLEM SOLVING WITH THE ELECTRON MICROSCOPE, 2001, 589 : 247 - 252
  • [44] ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF ION-IMPLANTED AMORPHOUS-SILICON
    LECOMBER, PG
    SPEAR, WE
    MULLER, G
    KALBITZER, S
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 327 - 332
  • [45] ON ANOMALOUS CHANNELING EFFECTS IN ION-IMPLANTED SILICON
    MAZZONE, AM
    PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (05) : 235 - 238
  • [46] EFFECTS OF ION-IMPLANTED FLUORINE IN SILICON DIOXIDE
    TOPICH, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C142 - C142
  • [47] Optical contrast in ion-implanted amorphous silicon carbide nanostructures
    Takahashi, S.
    Dawson, P.
    Zayats, A. V.
    Bischoff, L.
    Angelov, O.
    Dimova-Malinovska, D.
    Tsvetkova, T.
    Townsend, P. D.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (23) : 7492 - 7496
  • [48] LASER ANNEALING OF NITROGEN AND OXYGEN ION-IMPLANTED SILICON LAYERS
    DELLAMEA, G
    MAZZOLDI, P
    FOTI, G
    RIMINI, E
    MATERIALS CHEMISTRY, 1979, 4 (03): : 565 - 569
  • [49] CHEMICAL ETCHING OF ION-IMPLANTED AMORPHOUS-SILICON CARBIDE
    EDMOND, JA
    PALMOUR, JW
    DAVIS, RF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 650 - 652
  • [50] Comparison of the structures of evaporated and ion-implanted amorphous silicon samples
    Pusztai, L
    Kugler, S
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (17) : 2617 - 2624
12345