HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：77
作者：
KETTERSON, A
MOLONEY, M
MASSELINK, WT
PENG, CK
KLEM, J
FISCHER, R
KOPP, W
MORKOC, H
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 12期
关键词：
D O I：
10.1109/EDL.1985.26255
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：628 / 630
页数：3
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