HIGH-FREQUENCY PERFORMANCE OF ALGAAS/INGAAS/GAAS STRAINED LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0

作者：

SULLIVAN, GJ ^{[1
]}

ASBECK, PM ^{[1
]}

CHANG, MF ^{[1
]}

MILLER, DL ^{[1
]}

WANG, KC ^{[1
]}

机构：

[1] ROCKWELL INT CORP,THOUSAND OAKS,CA 91360

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1845 / 1846

页数：2

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