HIGH-POWER DENSITY PULSED X-BAND HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：14

作者：

ADLERSTEIN, MG

ZAITLIN, MP

FLYNN, G

HOKE, W

HUANG, J

JACKSON, G

LEMONIAS, P

MAJARONE, R

TONG, E

机构：

[1] Raytheon Research Division, Lexington, MA 02173

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 02期

关键词：

BIPOLAR DEVICES; TRANSISTORS; MICROWAVE COMPONENTS;

D O I：

10.1049/el:19910096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Abrupt junction Npm AlGaAs/GaAs heterojunction bipolar transistors giving 10 GHz output power density of 6.2 mW/mu-m2 (18.7 W per mm emitter length) are reported. Pulse length was 300 nS with 33% duty cycle. Associated gain and power-added efficiency were 5.0dB and 46%, respectively. Associated peak power was 561mW. Peak and average powers were measured as a function of pulse length at fixed duty cycle and found to increase sharply from CW values for pulse lengths less than 1000 nS.

引用

页码：148 / 149

页数：2

共 4 条

[1]

Bayraktaroglu B., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P1057, DOI 10.1109/MWSYM.1989.38904

[2]

BAYRAKTAROGLU B, 1988, IEEE MTT S, P529

[3]

Ha T T, 1981, SOLID STATE MICROWAV

[4] HIGH-POWER EFFICIENCY X-BAND GAALAS/GAAS HBT [J].

WANG, NL ;

SHENG, NH ;

CHANG, MF ;

HO, WJ ;

SULLIVAN, GJ ;

SOVERO, E ;

HIGGINS, JA ;

ASBECK, PM .

PROCEEDINGS : IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1989, :160-166

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