TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFECTS IN SN-DOPED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
作者：
CHEN, SH
CARTER, CB
ENQUIST, P
机构：
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 02期
关键词：
D O I：
10.1007/BF00626415
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：143 / 151
页数：9
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