ENERGY-RESOLVED STUDY OF THE SPIN PRECESSION IN PHOTOEMISSION FROM ACTIVATED (110) GAAS

被引：9
作者：
RIECHERT, H
DROUHIN, HJ
HERMANN, C
机构：
[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER
[2] ECOLE POLYTECH, PHYS MAT CONDENSEE LAB, F-91128 PALAISEAU, FRANCE
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.38.4136
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4136 / 4155
页数：20
相关论文
共 37 条
[1]  
[Anonymous], 1966, SEMICONDUCTORS SEMIM
[2]  
Aronov A. G., 1983, Soviet Physics - JETP, V57, P680
[3]  
BELL, 1973, NEGATIVE ELECTRON AF
[4]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[5]   EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE [J].
BURT, MG ;
INKSON, JC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :L5-L7
[6]   EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY [J].
BURT, MG ;
INKSON, JC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (01) :L3-L5
[7]   A COMPACT CYLINDRICAL MOTT ELECTRON POLARIMETER OPERATING WITH ACCELERATING VOLTAGE IN THE RANGE 20-100 KV [J].
CAMPBELL, DM ;
HERMANN, C ;
LAMPEL, G ;
OWEN, R .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1985, 18 (08) :664-672
[8]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[9]  
CHRISTENSEN NE, 1984, PHYS REV B, V30, P5753, DOI 10.1103/PhysRevB.30.5753
[10]   SPLITTING OF THE CONDUCTION BANDS OF GAAS FOR K ALONG [110] [J].
CHRISTENSEN, NE ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1984, 51 (07) :491-493
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