SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS

被引：63

作者：

BARKER, RA ^{[1
]}

MAYER, TM ^{[1
]}

BURTON, RH ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：583 / 586

页数：4

共 17 条

[1]

BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[2] PLASMA SEPARATION OF INGAASP-INP LIGHT-EMITTING-DIODES [J].

BURTON, RH ;

TEMKIN, H ;

KERAMIDAS, VG .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :411-412

[3]

BURTON RH, UNPUB J ELECTROCHEM

[4] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J].

CHANG, RPH ;

CHANG, CC ;

DARACK, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :45-50

[5] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[6]

DONNELLY VM, 1981, FAL EL SOC M DENV

[7] SPUTTERING OF METAL-ALLOYS CONTAINING 2ND-PHASE PRECIPITATES [J].

GREENE, JE ;

NATARAJAN, BR ;

SEQUEDAOSORIO, F .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :417-425

[8]

Katz W., 1980, Surface and Interface Analysis, V2, P120, DOI 10.1002/sia.740020308

[9] REACTIVE ION ETCHING OF GAAS IN CCL2F2 [J].

KLINGER, RE ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :620-622

[10]

KUBASCHEWSKI O, 1958, METALLURGICAL THERMO, P326

← 1 2 →