PREPARATION OF SIC FILMS BY SOLID-STATE SOURCE EVAPORATION

被引：6

作者：

FISSEL, A ^{[1
]}

SCHROTER, B ^{[1
]}

KRAUSSLICH, J ^{[1
]}

RICHTER, W ^{[1
]}

机构：

[1] UNIV JENA,INST OPT & QUANTENELEKTRON,D-07743 JENA,GERMANY

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

ANGER ELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; X-RAY DIFFRACTION;

D O I：

10.1016/0040-6090(94)06378-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiC thin films on Si(111) were grown using solid state evaporation at relatively low temperatures, Growth rates of 3-10 nm min(-1) have been achieved at 750-900 degrees C. Results obtained from IR spectroscopy, Auger electron spectroscopy and X-ray diffraction indicate good crystalline growth at T > 800 degrees C in the case of a stoichiometric composition. The crystallinity was found to be deteriorated in layers with excess Si or C. In addition, shifts in the IR absorption peak indicate that the non-stoichiometric layers were highly stressed. Annealing of non-stoichiometric layers shifts the peak to the position obtained for stoichiometric layers.

引用

页码：64 / 66

页数：3

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