MAGNETIC EPITAXIAL-FILMS - APPLICATIONS AND POTENTIAL

被引：3

|

作者：

LESSOFF, H ^{[1
]}

WEBB, DC ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

THIN SOLID FILMS | 1976年 / 39卷 / DEC期

关键词：

D O I：

10.1016/0040-6090(76)90636-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：185 / 194

页数：10

相关论文

共 50 条

[41] PLASMA REFLECTIVITY OF TIN TELLURIDE EPITAXIAL-FILMS
ZHELEVA, NN
KUSHEV, DB
INFRARED PHYSICS, 1981, 21 (01): : 55 - 61
[42] CRYSTALLOGRAPHIC ANALYSIS OF DOMAIN FORMATION IN EPITAXIAL-FILMS
POND, RC
JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 946 - 950
[43] LAYER AND SPIRAL GROWTH OF CDTE EPITAXIAL-FILMS
LOPEZOTERO, A
HUBER, W
SURFACE SCIENCE, 1979, 86 (JUL) : 167 - 173
[44] PHASE-SEPARATION IN INGAASP EPITAXIAL-FILMS
MCDEVITT, TL
MAHAJAN, S
LAUGHLIN, DE
BONNER, WA
KERAMIDAS, VG
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 7 - 8
[45] OXYGEN GETTERING IN THIN SILICON EPITAXIAL-FILMS
LOBANOVICH, EF
KOVALCHUK, MV
PETLITSKII, AN
SOVIET MICROELECTRONICS, 1989, 18 (03): : 144 - 147
[46] ELECTROPHYSICAL CHARACTERISTICS OF EPITAXIAL-FILMS OF CADMIUM TELLURIDE
BELYAYEV, AP
RUBETS, VP
KALINKIN, IP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1990, 33 (03): : 72 - 76
[47] A MODEL FOR THE LATERAL VARIATION OF AUTODOPING IN EPITAXIAL-FILMS
SRINIVASAN, GR
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 558 - 561
[48] FORMATION AND PROPERTIES OF TRANSITION LAYERS IN EPITAXIAL-FILMS
ALEKSANDROV, LN
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 103 - 112
[49] RAMAN STUDIES ON GAAS EPITAXIAL-FILMS ON SI
MATSUDA, Y
FUJITA, K
HINOTANI, S
APPLIED SURFACE SCIENCE, 1991, 48-9 : 231 - 236
[50] KINETICS OF HYDROGEN EFFECT ON PBSE EPITAXIAL-FILMS
YOUNG, JJ
ZEMEL, JN
THIN SOLID FILMS, 1976, 31 (1-2) : 25 - 37

← 1 2 3 4 5 →