A wideband CMOS inductorless low noise amplifier employing noise cancellation for digital TV tuner applications

被引：0

作者：

Zhang Jihong ^{[1
]}

Bai Xuefei ^{[1
]}

Huang Lu ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Elect Sci & Technol, Hefei 230027, Anhui, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 09期

关键词：

LNA; noise cancellation; CMOS; wideband;

D O I：

10.1088/1674-4926/34/9/095011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A wideband inductorless low noise amplifier for digital TV tuner applications is presented. The proposed LNA scheme uses a composite NMOS/PMOS cross-coupled transistor pair to provide partial cancellation of noise generated by the input transistors. The chip is implemented in SMIC 0.18 mu m CMOS technology. Measurement shows that the proposed LNA achieves 12.2-15.2 dB voltage gain from 300 to 900 MHz, the noise figure is below 3.1 dB and has a minimum value of 2.3 dB, and the best input-referred 1-dB compression point (IP1dB) is 17 dBm at 900 MHz. The core consumes 7 mA current with a supply voltage of 1.8 V and occupies an area of 0.5 x 0.35 mm(2).

引用

页数：6

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