THE MECHANISMS OF ION-BEAM MODIFICATION OF PMMA FOR DRY ETCH DEVELOPMENT ION-BEAM LITHOGRAPHY

被引：4

作者：

BEALE, MIJ

BROUGHTON, C

PIDDUCK, AJ

DESHMUKH, VGI

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80198-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：995 / 1000

页数：6

共 8 条

[1] DRY DEVELOPMENT OF ION-BEAM EXPOSED PMMA RESIST [J].

ADESIDA, I ;

CHINN, JD ;

RATHBUN, L ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :666-671

[2]

Beale M. I. J., 1985, Microelectronic Engineering, V3, P451, DOI 10.1016/0167-9317(85)90056-5

[3]

CLEAVER JRA, 1983, P MICROCIRCUIT ENG 8

[4] DRY DEVELOPMENT OF RESISTS EXPOSED TO LOW-ENERGY FOCUSED GALLIUM ION-BEAM [J].

KUWANO, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1149-1154

[5] RESIST PATTERNING AND X-RAY MASK FABRICATION EMPLOYING FOCUSED ION-BEAM EXPOSURE AND SUBSEQUENT DRY ETCHING [J].

KUWANO, H ;

TAKAOKA, H ;

OZAWA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1357-1361

[6]

KUWANO H, 1980, JPN J APPL PHYS, V19, P615

[7] THIN-FILMS PREPARED BY PLASMA POLYMERIZATION OF METHYL-METHACRYLATE AND THEIR PROPERTIES AS AN ELECTRON-BEAM RESIST [J].

MARTINU, L ;

BIEDERMAN, H .

VACUUM, 1983, 33 (05) :253-254

[8] PLASMA-DEVELOPED ION-IMPLANTED RESISTS WITH SUB-MICRON RESOLUTION [J].

VENKATESAN, T ;

TAYLOR, GN ;

WAGNER, A ;

WILKENS, B ;

BARR, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1379-1384

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