A HEAT-TRANSFER ALGORITHM FOR THE LASER-INDUCED MELTING AND RECRYSTALLIZATION OF THIN SILICON LAYERS

被引：31

作者：

GRIGOROPOULOS, CP

BUCKHOLZ, RH

DOMOTO, GA

机构：

[1] COLUMBIA UNIV,DEPT MECH ENGN,NEW YORK,NY 10027

[2] XEROX CORP,PALO ALTO RES CTR,MECH ENGN SCI,N TARRYTOWN,NY 10591

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2304 / 2309

页数：6

相关论文

共 20 条

[1] Atthey D, 1974, J I MATHS APPLICS, V13, P353
[2] Born M, 1980, PRINCIPLES OPTICS
[3] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA
BOSCH, MA
LEMONS, RA
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (16) : 1151 - 1155
[4] TEMPERATURE DISTRIBUTIONS PRODUCED IN A 2-LAYER STRUCTURE BY A SCANNING CW LASER OR ELECTRON-BEAM
BURGENER, ML
REEDY, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4357 - 4363
[5] Douglas J., 1964, NUMER MATH, V6, P428
[6] THE ROLE OF REFLECTIVITY CHANGE IN OPTICALLY INDUCED RECRYSTALLIZATION OF THIN SILICON FILMS
GRIGOROPOULOS, CP
BUCKHOLZ, RH
DOMOTO, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 454 - 458
[7] GRIGOROPOULOS CP, UNPUB J HEAT TRANSFE
[8] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS
HAWKINS, WG
BIEGELSEN, DK
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 358 - 360
[9] INSTABILITY IN RADIATIVELY MELTED SILICON FILMS
JACKSON, KA
KURTZE, DA
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 385 - 390
[10] JELISSON GE, 1983, PHYS REV B, V27, P7466