Unipolar resistive switching of Au+-implanted ZrO2 films

被引：12

作者：

Liu Qi ^{[1
,2
]}

Long Shibing ^{[1
]}

Guan Weihua ^{[1
]}

Zhang Sen ^{[1
]}

Liu Ming ^{[1
]}

Chen Junning ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Anhui, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 04期

基金：

中国国家自然科学基金;

关键词：

RRAM; resistive switching; ion implantation; ZrO2;

D O I：

10.1088/1674-4926/30/4/042001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The resistive switching characteristics of Ate -implanted ZrO2 films are investigated. The Au/Cr/At+ implanted-ZrO2/n(+) -Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/At+ -implanted-ZrO2/n(+) -Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

引用

页数：4

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