EFFECT OF SURFACE PROPERTIES ON N-TYPE GAAS-NI AND GAAS-AL SCHOTTKY DIODES

被引：4

作者：

PATWARI, AM ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,MERZ LABS,NEWCASTLE UPON TYNE,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssa.2210260209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：469 / 475

页数：7

共 15 条

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[3]

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[4]

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[8] ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM [J].

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[9] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS [J].

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[10] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].

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