EFFECT OF SURFACE PROPERTIES ON N-TYPE GAAS-NI AND GAAS-AL SCHOTTKY DIODES

被引：4

作者：

PATWARI, AM ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] UNIV NEWCASTLE,DEPT ELECT & ELECTR ENGN,MERZ LABS,NEWCASTLE UPON TYNE,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssa.2210260209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：469 / 475

页数：7

相关论文

共 15 条

[1] ADAMS AC, 1974, J ELECTROCHEM SOC, V120, P408
[2] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &
[3] GANZABELLA CF, 1966, 1 S GALL ARS READ 3, P131
[4] HACKAM R, 1972, IEEE T ELECTRON DEVI, VED19, P1231
[5] DISLOCATIONS IN GAAS PRODUCED BY DEVICE FABRICATION
HARTNAGEL, H
WEISS, BL
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 799 - 803
[6] CONTRIBUTION TO ETCH POLISHING OF GAAS
HARTNAGEL, H
WEISS, BL
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (07) : 1061 - 1063
[7] SCHOTTKY-BARRIER ANOMALIES AND INTERFACE STATES
LEVINE, JD
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3991 - +
[8] ACCURATE SOLUTION OF AN IDEALIZED ONE-CARRIER METAL-SEMICONDUCTOR JUNCTION PROBLEM
MACDONALD, JR
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (JAN-F) : 11 - 37
[9] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS
PADOVANI, FA
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 193 - +
[10] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS
PADOVANI, FA
SUMNER, GG
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3744 - &