THE RESOLUTION OF THE INORGANIC ELECTRON-BEAM RESIST LIF(ALF(3))

被引：13
作者：
LANGHEINRICH, W
BENEKING, H
机构：
[1] Institute of Semiconductor Electronics Aachen Technical University
来源：
MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(94)90157-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The resolution limit of the inorganic electron beam resist LiF(AIF(3)) was investigated. This lithium-fluoride based resist is self-developing, because the exposure mechanism runs via desorption of the irradiated material (radiolysis). An important magnitude for the determination of the resolution limit seems to be the threshold energy. This is the energy, which is required for the initiation of an exposure event. Sind the threshold energy for LiF(AlF3) is relatively high, an improved resolution is expected, compared to e.g. PMMA. Experimentally, 3nm lines and spaces were verified, in excellent agreement with a theoretical prediction.
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收藏
页码：287 / 290
页数：4
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