AMORPHOUS SIN-H DIELECTRICS WITH LOW-DENSITY OF DEFECTS

被引：59

作者：

HASEGAWA, S

MATUURA, M

KURATA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1272 / 1274

页数：3

共 17 条

[1] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1982, 26 (11) :6040-6052

[2] JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1627-1629

[3] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS [J].

FUJITA, S ;

SASAKI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :398-402

[4] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI [J].

HASEGAWA, S ;

NARIKAWA, S ;

KURATA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05) :431-447

[5] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J].

IBARAKI, N ;

FRITZSCHE, H .

PHYSICAL REVIEW B, 1984, 30 (10) :5791-5799

[6] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J].

KARCHER, R ;

LEY, L ;

JOHNSON, RL .

PHYSICAL REVIEW B, 1984, 30 (04) :1896-1910

[7] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J].

KURATA, H ;

HIROSE, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L811-L813

[8] THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2) [J].

LOWE, AJ ;

POWELL, MJ ;

ELLIOTT, SR .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1251-1258

[9] COMPOSITION AND STRUCTURE CONTROL BY SOURCE GAS RATIO IN LPCVD SINX [J].

MAKINO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :450-455

[10] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS [J].

MORIMOTO, A ;

TSUJIMURA, Y ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1394-1398

← 1 2 →