STRUCTURE, CHEMISTRY, AND FERMI-LEVEL MOVEMENT AT INTERFACES OF EPITAXIAL NIAL AND GAAS(001)

被引：11
作者：
CHAMBERS, SA
LOEBS, VA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.585001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：724 / 729
页数：6
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