CURRENT-VOLTAGE CHARACTERISTIC OF TI-PSI METAL-OXIDE-SEMICONDUCTOR DIODES

被引：104

|

作者：

HANSELAER, PL

LAFLERE, WH

VANMEIRHAEGHE, RL

CARDON, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.334265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2309 / 2314

页数：6

相关论文

共 50 条

[1] INFLUENCE OF SEMICONDUCTOR BARRIER TUNNELING ON THE CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL METAL-OXIDE-SEMICONDUCTOR DIODES
NIELSEN, OM
JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5880 - 5886
[2] Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures
Demkov, AA
Zhang, XD
Drabold, DA
PHYSICAL REVIEW B, 2001, 64 (12)
[3] ON THE PROBLEM OF THE REVERSE CURRENT-VOLTAGE CHARACTERISTIC OF SEMICONDUCTOR DIODES
AVAKYANTS, GM
ARONOV, DA
KARAGEORGIIALKALAEV, PM
SOVIET PHYSICS-SOLID STATE, 1961, 3 (05): : 1016 - 1023
[4] Analysis of current components observed by cyclic current-voltage measurement in metal-oxide-semiconductor capacitors
Jeon, H
Choi, S
Ahn, B
Roh, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (11B): : L1152 - L1154
[5] On the oxide thickness estimation from the Current-Voltage characteristics of thin metal-oxide-semiconductor structure
Mohaidat, JM
Ahmad-Bitar, RN
ICM 2002: 14TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2002, : 261 - 264
[6] Analysis of current components observed by cyclic current-voltage measurement in metal-oxide-semiconductor capacitors
Jeon, Hyungoo
Choi, Sungwoo
Ahn, Byungchul
Roh, Yonghan
Japanese journal of applied physics, 2000, 39 (11 B)
[7] INFLUENCE OF OXIDE THICKNESS NONUNIFORMITIES ON THE TUNNEL CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF THE METAL-OXIDE-SEMICONDUCTOR SYSTEM
MAJKUSIAK, B
STROJWAS, A
JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) : 5638 - 5647
[8] Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistors
Yunus, M
Haque, A
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 600 - 604
[9] AN INVESTIGATION OF ANOMALOUS CURRENT-VOLTAGE CHARACTERISTICS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
LIU, PS
LIU, GT
JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1410 - 1416
[10] Investigation of anomalous current-voltage characteristics in silicon-on-insulator metal-oxide-semiconductor transistors
Journal of Applied Physics, 1993, 74 (02):

← 1 2 3 4 5 →