INTERFACE TRAP FORMATION VIA THE 2-STAGE H+ PROCESS

被引：166

作者：

SAKS, NS

BROWN, DB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1848 / 1857

页数：10

共 27 条

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