CHARACTERIZATION OF DEFECTS IN GAP AND GAASP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON-MICROSCOPY

被引：27

作者：

DUPUY, M ^{[1
]}

LAFEUILLE, D ^{[1
]}

机构：

[1] CTR ETUDES NUCL,LAB ELECTR & TECHNOL INFORMATIQUE,38041 GRENOBLE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90137-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：244 / 249

页数：6

共 14 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[2] FORMATION AND ELIMINATION OF HELICAL DISLOCATIONS IN SEMICONDUCTORS [J].

ABRAHAMS, MS ;

BLANC, J ;

BUIOCCHI, CJ .

PHILOSOPHICAL MAGAZINE, 1971, 23 (184) :795-&

[3] PREPARATION OF [100]-ORIENTED FOILS OF GAAS FOR TRANSMISSION ELECTRON MICROSCOPY [J].

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1980-&

[4] ON DETERMINATION OF NATURE OF DISLOCATION LOOPS [J].

EDMONDSON, B ;

WILLIAMSON, GK .

PHILOSOPHICAL MAGAZINE, 1964, 9 (98) :277-&

[5]

Friedel J., 1964, DISLOCATIONS

[6] DISSOCIATION OF DISLOCATIONS IN GAP [J].

GAI, PL ;

HOWIE, A .

PHILOSOPHICAL MAGAZINE, 1974, 30 (04) :939-943

[7] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J].

GEVERS, R ;

ART, A ;

AMELINCKX, S .

PHYSICA STATUS SOLIDI, 1963, 3 (09) :1563-1593

[8] HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES [J].

HERZOG, AH ;

KEUNE, DL ;

CRAFORD, MG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :600-&

[9] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1974, 30 (01) :65-73

[10] INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX [J].

MADER, S ;

BLAKESLEE, AE ;

ANGILELLO, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4730-4734

← 1 2 →