ZNGEP2 GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD

被引：49

作者：

HOBGOOD, HM ^{[1
]}

HENNINGSEN, T ^{[1
]}

THOMAS, RN ^{[1
]}

HOPKINS, RH ^{[1
]}

OHMER, MC ^{[1
]}

MITCHEL, WC ^{[1
]}

FISCHER, DW ^{[1
]}

HEGDE, SM ^{[1
]}

HOPKINS, FK ^{[1
]}

机构：

[1] WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of ZnGeP2 by the liquid encapsulated Czochralski method is reported for the first time herein. Large boules of ZnGeP2, with diameters up to 40 mm and weights up to 400 gm were grown by Czochralski pulling from B2O3 encapsulated melts under high pressure (20 atm Ar) using axial gradients < 120-degrees-C/cm. Boules pulled at < 4 mm/h exhibited large (50 X 20 X 15 mm3) monocrystalline grains of alpha-phase ZnGeP2 With room temperature electrical properties of p-type conduction, carrier concentrations ranging from 10(12) to 10(16) CM-3, and mobilities of 20 cm2/V S or less. Optical samples exhibited broad IR transmission (0.7 to 12.5 mum), second harmonic generation at 4.7 mum with 7.2% conversion efficiency, a broad subband gap photoluminescence signature, and near band-edge absorption similar to that observed in Bridgman-grown ZnGeP2.

引用

页码：4030 / 4037

页数：8

共 29 条

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