SEQUENTIAL SINGLE-PHONON EMISSION IN GAAS-ALXGA1-XAS TUNNEL-JUNCTIONS

被引:87
作者
HICKMOTT, TW
SOLOMON, PM
FANG, FF
STERN, F
FISCHER, R
MORKOC, H
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
关键词
D O I
10.1103/PhysRevLett.52.2053
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2053 / 2056
页数:4
相关论文
共 12 条
[1]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[2]   FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1968, 13 (08) :247-&
[3]   ELECTRONS AND OPTIC PHONONS IN SOLIDS - EFFECTS OF LONGITUDINAL OPTICAL LATTICE-VIBRATIONS ON ELECTRONIC EXCITATIONS OF SOLIDS [J].
HARPER, PG ;
HODBY, JW ;
STRADLING, RA .
REPORTS ON PROGRESS IN PHYSICS, 1973, 36 (01) :1-101
[4]   RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J].
HICKMOTT, TW ;
SOLOMON, PM ;
FISCHER, R ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :90-92
[5]   IMPURITY CONDUCTION AND MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS [J].
KAHLERT, H ;
LANDWEHR, G ;
SCHLACHETZKI, A ;
SALOW, H .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (04) :361-365
[6]   POINT-CONTACT SPECTROSCOPY OF ELECTRON RELAXATION MECHANISMS IN SEMICONDUCTORS [J].
KULIK, IO ;
SHEKHTER, RI .
PHYSICS LETTERS A, 1983, 98 (03) :132-134
[7]  
MATVEEV GA, 1981, SOV PHYS SEMICOND+, V15, P1355
[8]  
MOTT NF, 1974, METAL INSULATOR TRAN, P207
[9]  
Nicollian E. H., 1982, MOS PHYSICS TECHNOLO, P385
[10]   ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J].
SOLOMON, PM ;
HICKMOTT, TW ;
MORKOC, H ;
FISCHER, R .
APPLIED PHYSICS LETTERS, 1983, 42 (09) :821-823