GOLD DIFFUSIVITIES IN SIO2 AND SI USING MOS STRUCTURE - (800 TO 1200 DEGREES C - IMPURITY EFFECTS - BULK VS SURFACE DIFFUSION - E/T)

被引：59
作者：
COLLINS, DR
SCHRODER, DK
SAH, CT
机构：
来源：
APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 12期
关键词：
D O I：
10.1063/1.1754459
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：323 / &
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