COMPARISON OF RATE-EQUATION AND FABRY-PEROT APPROACHES TO MODELING A DIODE-LASER

被引：30

作者：

CASSIDY, DT

机构：

来源：

APPLIED OPTICS | 1983年 / 22卷 / 21期

关键词：

D O I：

10.1364/AO.22.003321

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：3321 / 3326

页数：6

相关论文

共 11 条

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739
[2] ARNOLD G, 1980, SEMICONDUCTOR DEVICE
[3] CASSIDY DT, 1983, UNPUB IEEE J QUA JUN
[4] MEASUREMENT OF SPONTANEOUS EMISSION FACTOR FOR INJECTION-LASERS
GOODWIN, JC
GARSIDE, BK
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (08) : 1264 - 1271
[5] OPTICAL MASER OSCILLATORS + NOISE
GORDON, EI
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P2): : 507 - +
[6] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[7] HIGH-REFLECTIVITY CAVITY MIRRORS FOR HIGH-PERFORMANCE (GAAL)AS DIODE-LASERS
KATO, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (08) : 563 - 565
[8] COMPUTER-MODEL OF AN INJECTION-LASER AMPLIFIER
MARCUSE, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (01) : 63 - 73
[9] ANALYSIS OF DIODE-LASER PROPERTIES
STREIFER, W
SCIFRES, DR
BURNHAM, RD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (11) : 1918 - 1929
[10] MEASUREMENT OF SPONTANEOUS-EMISSION FACTOR OF ALGAAS DOUBLE-HETEROSTRUCTURE SEMICONDUCTOR-LASERS
SUEMATSU, Y
AKIBA, S
HONG, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 596 - 600