ELECTRICAL DEGRADATION OF N-SI/PTSI/(TI-W)/AL SCHOTTKY CONTACTS INDUCED BY THERMAL TREATMENTS

被引：11

作者：

CANALI, C

FANTINI, F

ZANONI, E

机构：

[1] IST FIS,I-41100 MODENA,ITALY

[2] TELETTRA SPA,I-20059 VIMERCATE,ITALY

来源：

THIN SOLID FILMS | 1982年 / 97卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90524-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：325 / 331

页数：7

共 9 条

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[5] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

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MAYER, JW .

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[6] REVIEW OF THEORY, TECHNOLOGY AND APPLICATIONS OF METAL-SEMICONDUCTOR RECTIFIERS [J].

RIDEOUT, VL .

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[7]

Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[8]

SULLIVAN MJ, 1978, THIN FILM INTERDIFFU, P26

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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