HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

被引：0
|
作者：
SONG, ZZ [1 ]
ZHAN, FQ [1 ]
YU, G [1 ]
KONG, GL [1 ]
CHEN, GH [1 ]
机构：
[1] CHINESE ACAD SCI, INST SEMICOND, BEIJING 100083, PEOPLES R CHINA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.
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页码：305 / 308
页数：4
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