ION-BEAM MILLING EFFECT ON ELECTRICAL-PROPERTIES OF HG1-XCDXTE

被引：65

作者：

BAHIR, G

FINKMAN, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.576101

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：348 / 353

页数：6

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[7] DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE [J].

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