MEASUREMENT OF MOS LEAKAGE CONDUCTANCE BY MEANS OF THE LATERAL PHOTOVOLTAIC EFFECT

被引：0
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作者：
SHIKAMA, T
NIU, H
TAKAI, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 01期
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D O I：
10.1143/JJAP.24.45
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：45 / 50
页数：6
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