THERMAL-STABILITY OF HETEROJUNCTION INTERFACES IN GAAS/ALGAAS STRUCTURES

被引：0

作者：

MORGAN, DV

CHRISTOU, A

DISKETT, D

GAUNEAU, GM

机构：

[1] UNIV CRETE,HERAKLION,GREECE

[2] ROYAL MIL COLL SCI,SWINDON SN6 8LA,WILTS,ENGLAND

[3] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 25期

关键词：

Semiconducting Gallium Compounds;

D O I：

10.1049/el:19881057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the preliminary study of the stability of GaAs/AlGaAs interfaces under thermal stressing up to 1000°C in an optical furnace. The interfaces are studied using RBS and SIMS techniques and they confirm that no observable degradation occurs up to 900°C. At 1000°C diffusion of aluminum from the AlGaAs layer into the GaAs occurs but this is at a very low level.

引用

页码：1549 / 1550

页数：2